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Relative emission intensity in% as a function of the frequency. Inset (a) shows the threshold behavior of the emission intensity as a function of . Inset (b) represents the reflectivity/transmission of the sample as a function of the frequency.
Relative emission intensity for two different grating-gated structures 1 and 2. The spectra were calculated for the plasmon temperature of . The value of the background emissivity factor was fitted as . The electron relaxation time is . The background temperature is . The inset shows the intensity of the thermal emission at a frequency of vs the plasmon temperature for three different values of the emissivity factor . Terahertz emission spectra of structure 1 without the grating gate and are shown by dashed curves.
Geometrical parameter description of the double grating gate structures.
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