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(a) Bright field planar TEM micrographs for 20% incorporated thin films annealed at , inset shows the electron diffraction pattern of the same film. (b) PL spectra of 10% incorporated thin films annealed at different temperatures, and (c) PL spectra of thin films doped with different concentrations. Insets in (b) and (c) show the dependence of the integrated PL intensity of on the annealing temperature and the doping concentration, respectively.
(a) SSPL spectra for film annealed at incorporated with 20% and 4% , the values denoted in the figure indicate the offset; (b) Integrated SSPL intensity as a function of excitation wavelength for samples with different concentrations. The inset shows the dependence of the SSPL intensity and the SSPL maximum on the concentration. The lines are drawn as a guide for the eyes.
Illustration of energy transfer process between nanoparticles and and the luminescence processes. The energy levels (ELs) marked as 1, 2, and 3 corresponds to phonon assistant energy transfer (PAET), resonant energy transfer, and energy back transfer process (quench), respectively.
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