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TEM images of PbS NCs (a) before and (b) after EDT treatment. Scale bar is in both images. Interparticle spacing starts at and reduces to as a result of EDT treatment. The reduction in interparticle spacing contributes to the measured increase in mobility of thin solid films treated in this manner.
PbS NC thin film FET characteristics for a device at the final stages of treatment. The vs transfer curve of the device indicates that it behaves as a -FET with -type conduction and majority hole carriers in the NC thin film. The inset of shows the measured thermal voltage confirming that the majority carriers are type.
XPS spectra of PbS NC films used to following the oxidation content at different stages of treatment. Experimental data is fit using a sum of four curves indicating the presence of PbO, , , and (from the Si substrate). In (a) untreated PbS, NCs show the presence of all three oxidation products. (b) Indicates that PbS NCs which have been treated with EDT show a reduction in the PbO and content. (c) EDT treated PbS NCs heated in air exhibit a return of PbO and content.
Summary of electronic properties of a CQD PbS thin film at progressive stages of treatment.
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