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-plane GaN epitaxial lateral overgrowth structures: Growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy
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10.1063/1.2920846
/content/aip/journal/apl/92/21/10.1063/1.2920846
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/21/10.1063/1.2920846
/content/aip/journal/apl/92/21/10.1063/1.2920846
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/content/aip/journal/apl/92/21/10.1063/1.2920846
2008-05-29
2015-01-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: A-plane GaN epitaxial lateral overgrowth structures: Growth domains, morphological defects, and impurity incorporation directly imaged by cathodoluminescence microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/21/10.1063/1.2920846
10.1063/1.2920846
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