1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Excellent electrical properties of layered higher- gate dielectrics with sub- equivalent oxide thickness
Rent:
Rent this article for
USD
10.1063/1.2929680
/content/aip/journal/apl/92/21/10.1063/1.2929680
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/21/10.1063/1.2929680
/content/aip/journal/apl/92/21/10.1063/1.2929680
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/92/21/10.1063/1.2929680
2008-05-27
2014-10-21
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Excellent electrical properties of TiO2∕HfSiO∕SiO2 layered higher-k gate dielectrics with sub-1nm equivalent oxide thickness
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/21/10.1063/1.2929680
10.1063/1.2929680
SEARCH_EXPAND_ITEM