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Structural and morphological properties presented by a typical film with thickness, produced by rf magnetron cosputtering. (a) X-ray diffractogram for film deposited at room temperature and annealed at . (b) SEM cross section of film deposited on wafer viewed at 52°. (c) Surface morphology by SEM and (d) AFM image, presenting an average roughness around .
transfer characteristics obtained at (saturation region) for TFT produced at (a) room temperature (S1) and (b) produced at (S2). Both devices were postannealed at in a nitrogen atmosphere for . The saturation mobility was calculated by the derivative of the plot with (right ordinate axis).
XPS atomic percentages for Zn, Ga, Sn, and O elements and and atomic ratios.
Comparison between the electrical extracted parameters for the two series (S1 and S2) of TFTs after each annealing temperature. a) denotes as-deposited, nw denotes not working, and ns denotes not stable.
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