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Effect of hydrogen incorporation temperature in in plane -engineered heterostructures
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10.1063/1.2939000
/content/aip/journal/apl/92/22/10.1063/1.2939000
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/22/10.1063/1.2939000
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) SIMS depth profiles of a GaAsN epilayer deuterated at different temperatures . Left axis (logarithmic scale): D profile for (triangles-line) and (squares-line). Right axis (linear scale): N profile as observed for both ’s. D doses were at and at . (b) SIMS D profile in the region of the leading edge for (triangles) and (squares). The lines are a simulation to the data by solving numerically Eqs. (1) and (2) and then applying Eq. (3).

Image of FIG. 2.
FIG. 2.

PL spectra at of the same GaAsN sample whose SIMS profiles are shown in Fig. 1. The bottommost line refers to the untreated sample. The other spectra have been recorded on ensembles of GaAsN wires obtained by deposition of Ti stripes on the sample surface prior to hydrogenation (see sketch on top left). The wires had different width and were spaced by . Hydrogenation was performed at two temperatures (triangles-line) and (squares-line) with hydrogen doses and , respectively.

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/content/aip/journal/apl/92/22/10.1063/1.2939000
2008-06-02
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of hydrogen incorporation temperature in in plane-engineered GaAsN∕GaAsN:H heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/22/10.1063/1.2939000
10.1063/1.2939000
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