Full text loading...
Fraction of photons spontaneously emitted by a planar or textured Si wafer, respectively, that are detected with and without being reabsorbed on an optical path . Calculations are shown for the total photon flux that would be measured with a Ge sensor and for the photon flux detected by a Si pin diode. The influence of a LP filter located between the sample and the sensor is also shown. Each curve is normalized to the corresponding photon flux that would be measured without reabsorption of photons.
Temperature dependent emitted photon flux versus effective bulk lifetime of a planar thick Si wafer. Realistic excess carrier distributions (by illumination from the front side) were taken into account, while the emitted photon flux was detected at the back side by using a Si pin sensor and a long pass filter. The detected signal is normalized to a detection under the same circumstances without reabsorption effect.
Maximal relative variations of the detected PL signal at certain temperatures by varying the bulk lifetime from (cf., Fig. 2). Results are shown for detection of the signal from the rear surface via a Ge sensor, a combination of Si pin sensor plus LP, and a combination of Si pin sensor plus a thick Si filter held at the sample temperature, respectively.
Article metrics loading...