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Atomic scale characterization of buried quantum dots using pulsed laser atom probe tomography
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View: Figures


Image of FIG. 1.
FIG. 1.

APT atom map showing the indium atoms within three consecutive wetting layers and their associated quantum dots (arrowed). For clarity, the gallium atoms of the capping layers and the arsenic atoms of the wetting and capping layers are not shown. The indium atoms apparent between the wetting layers are considered to be background noise.

Image of FIG. 2.
FIG. 2.

Two-dimensional indium concentration profiles obtained from a thick slice cut through the center of a quantum dot parallel to the growth direction. The colors are directly related to the indium concentration in the slice, where red implies the highest indium content of in and blue the absence of indium (apart from indium counts caused by background noise). The intersecting cylinders (1), (2), and (3) were used to calculate the one-dimensional indium profiles in Fig. 3(a).

Image of FIG. 3.
FIG. 3.

(a) One-dimensional indium composition profiles from the three different regions of the single quantum dot shown in Fig. 2, as indicated by the cylinders: (1) intersecting the indium rich core (-●-), (2) beside the core (-△-), and (3) through the wetting layer (-◻-). Exemplary error bars are given on the left side of the graph for and . [(b) and (c)] Results from the STEM investigations of Wang et al. (Ref. 9): (b) HAADF image and (c) corresponding indium composition profile, reprinted with permission.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Atomic scale characterization of buried InxGa1−xAs quantum dots using pulsed laser atom probe tomography