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Nonradiative recombination at threading dislocations in -type GaN: Studied by cathodoluminescence and defect selective etching
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10.1063/1.2928226
/content/aip/journal/apl/92/23/10.1063/1.2928226
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/23/10.1063/1.2928226
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Figures

Image of FIG. 1.
FIG. 1.

(a) Monochromatic CL map (band edge luminescence) of GaN grown by HVPE. Dark dots represent threading dislocations that are nonradiative recombination centers. (b) Secondary electron image of the area in (a) after defect selective etching, which reveals threading dislocations.

Image of FIG. 2.
FIG. 2.

(a) CL intensity line scan (integrated band edge luminescence) through the -type, grown in -type, and fresh -type dislocations. (b) Typical integrated CL spectrum of bulk GaN. (c) Spectra taken at the location of a grown in -type threading dislocation and in the surrounding matrix. Note the strongly reduced bound exciton luminescence at the location of the dislocation. (d) Spectra taken at the location of a grown in -type threading dislocation and in the surrounding matrix.

Image of FIG. 3.
FIG. 3.

(a) Excitation dependence (at ; ) and (b) temperature dependence of the CL contrast (at ; ) obtained from a deconvolution of a number of spectral maps.

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/content/aip/journal/apl/92/23/10.1063/1.2928226
2008-06-12
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonradiative recombination at threading dislocations in n-type GaN: Studied by cathodoluminescence and defect selective etching
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/23/10.1063/1.2928226
10.1063/1.2928226
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