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Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited gate dielectric
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10.1063/1.2937117
/content/aip/journal/apl/92/23/10.1063/1.2937117
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/23/10.1063/1.2937117

Figures

Image of FIG. 1.
FIG. 1.

(a) dc curve at for MOSFETs on SI-InP and substrates. (b) dc characteristics as a function of gate bias MOSFETs on SI-InP and substrates. The gate bias is varied from with step.

Image of FIG. 2.
FIG. 2.

characteristics of as a function of frequency for both substrate and substrate. The thickness of is .

Image of FIG. 3.
FIG. 3.

Calculated effective electron mobility as a function of gate voltage for SI-InP MOSFETs. Inset: curve between gate and channel.

Image of FIG. 4.
FIG. 4.

Threshold voltage shift and normalized drive current drift under constant voltage stress of for SI-InP MOSFETs. Flatband voltage of about was extracted from split in Fig. 3. and are the threshold voltage and the drive current of the fresh devices.

Image of FIG. 5.
FIG. 5.

dc and pulse for SI-InP MOSFETs. The frequency of gate pulse is .

Tables

Generic image for table
Table I.

Effects of sulfur passivation and PDA on MOSFETs characteristics ( and )

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/content/aip/journal/apl/92/23/10.1063/1.2937117
2008-06-13
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Gate-first inversion-type InP metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/23/10.1063/1.2937117
10.1063/1.2937117
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