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(a) dc curve at for MOSFETs on SI-InP and substrates. (b) dc characteristics as a function of gate bias MOSFETs on SI-InP and substrates. The gate bias is varied from with step.
characteristics of as a function of frequency for both substrate and substrate. The thickness of is .
Calculated effective electron mobility as a function of gate voltage for SI-InP MOSFETs. Inset: curve between gate and channel.
Threshold voltage shift and normalized drive current drift under constant voltage stress of for SI-InP MOSFETs. Flatband voltage of about was extracted from split in Fig. 3. and are the threshold voltage and the drive current of the fresh devices.
dc and pulse for SI-InP MOSFETs. The frequency of gate pulse is .
Effects of sulfur passivation and PDA on MOSFETs characteristics ( and )
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