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Electron energy-loss spectroscopy analysis of dielectric films on strained and relaxed substrates
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View: Figures


Image of FIG. 1.
FIG. 1.

VEEL spectra (a) for each of the indicated area and (b) of an annealed strained sample. The spectra show spatially well-resolved features.

Image of FIG. 2.
FIG. 2.

VEEL spectra for the four investigated samples. indicates relaxed; indicates strained sample. The stronger first peak A of film is reduced as the Si composition in the film increases.

Image of FIG. 3.
FIG. 3.

(a) and core-loss peak obtained from the nonannealed strained sample. Background-subtracted Si, Ge, and Hf electron counts, and the relative composition of Ge at each position from the film to the substrate, for the (b) nonannealed strained sample, (c) nonannealed relaxed sample, and (d) annealed relaxed sample. The relative composition of Ge is defined as the ratio of atomic percent of Ge to the sum of atomic percents of Si and Ge.

Image of FIG. 4.
FIG. 4.

spectra from (a) nonannealed relaxed sample and (b) annealed relaxed sample. The low-loss region of each spectrum is shown to provide information on the area where the spectra were obtained [compare with peaks in Fig. 1(a)], from near the dielectric film (black color), IL (red color), and substrate (green color). Note the positions of short arrows which indicate the major peaks.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron energy-loss spectroscopy analysis of HfO2 dielectric films on strained and relaxed SiGe∕Si substrates