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Control of film morphology and its effects on subthreshold characteristics in dibenzotetrathiafulvalene organic thin-film transistors
2.Naraso, J. Nishida, S. Ando, J. Yamaguchi, K. Itaka, H. Koinuma, H. Tada, S. Tokito, and Y. Yamashita, J. Am. Chem. Soc. 127, 10142 (2005).
6.For recent reviews, see articles of “Special Topics: Organic Conductors,” J. Phys. Soc. Jpn. 75, 5 (2006).
7.Organic Electron edited by H. Klauk (Wiley-VCH, Weinheim, 2006).
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The interface engineering of dibenzotetrathiafulvalene organic thin-film transistors (OTFTs) is reported. Polycrystalline-film morphologies are successfully controlled by surface treatments of silicon dioxide dielectric substrates using hexamethyldisilazane, a silane coupling agent, to tune the average lateral grain sizes between 0.2 and . The field-effect mobility of the resulting OTFTs is approximately . The effects of the grain sizes on subthreshold properties are discussed in terms of the charge transport against the grain boundaries through the films.
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