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Surface chemistry of plasma-assisted atomic layer deposition of studied by infrared spectroscopy
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10.1063/1.2940598
/content/aip/journal/apl/92/23/10.1063/1.2940598
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/23/10.1063/1.2940598
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Figures

Image of FIG. 1.
FIG. 1.

Literature data on the growth per cycle of as a function of deposition temperature for ALD processes using as precursor and , , or plasma as oxidant source. The data presented were corrected for differences in mass density and represent the growth per cycle of a film with a mass density of as typically reported for ALD films.

Image of FIG. 2.
FIG. 2.

Differential infrared spectra after the precursor and oxidation half-cycles showing appearance and disappearance (with respect to the baseline) of surface groups in the two ALD half-reactions. (a) Comparison between the surface groups involved in plasma-assisted and thermal ALD of at a deposition temperature of . (b) Surface groups involved in plasma-assisted ALD at deposition temperatures of 25, 100, and . The relevant peak positions of the groups, –OH groups, and CO-containing impurities (with or COO bonds) are indicated.

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/content/aip/journal/apl/92/23/10.1063/1.2940598
2008-06-10
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/23/10.1063/1.2940598
10.1063/1.2940598
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