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Observation of giant photocurrent gain in highly doped multiple-quantum-well-based photodiodes
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10.1063/1.2942384
/content/aip/journal/apl/92/23/10.1063/1.2942384
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/23/10.1063/1.2942384
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Normalized photocurrent gain for both samples I and II under optical excitation in the wells and barriers .

Image of FIG. 2.
FIG. 2.

characteristics as a function of temperature for sample I (sample II) (a) [(c)] in dark and (b) [(d)] under optical excitation at . Temperature ranges from 250 down to in steps of . The arrow shows the direction of current growth as increases for forward and reverse biases. The dashed arrows show this variation below at reverse bias.

Image of FIG. 3.
FIG. 3.

Photoconductance and photocapacitance as a function of voltage for optical excitation in the wells and barriers at room temperature and . The inset shows the photoconductance and photocapacitance at .

Image of FIG. 4.
FIG. 4.

Schematic representation of a generic conduction band (CB) for photoinduced screening. The electron (in the CB) and hole (in the valence band) accumulation at the boundaries of the electric field domains is explicitly indicated.

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/content/aip/journal/apl/92/23/10.1063/1.2942384
2008-06-13
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of giant photocurrent gain in highly doped (In,Ga)N∕GaN multiple-quantum-well-based photodiodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/23/10.1063/1.2942384
10.1063/1.2942384
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