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Enhanced performance of organic light-emitting diodes with an air-stable -type hole-injection layer
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FIG. 1.

Molecular structure of and characteristics of hole-only devices with the structures of and .

Image of FIG. 2.

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FIG. 2.

characteristics of hole-only devices with the structures of and .

Image of FIG. 3.

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FIG. 3.

characteristics of (device A) and (device B).

Image of FIG. 4.

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FIG. 4.

Operational stabilities of devices A and B measured at a constant current density of .

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/content/aip/journal/apl/92/23/10.1063/1.2942386
2008-06-13
2014-04-23

Abstract

An air-stable -type organic semiconductor, N,N-bis(4-trifluoromethoxybenzyl)-1,4,5,8-naphthalene-tetracarboxylic di-imide , can function as an excellent hole-injection layer to improve the hole injection from an indium tin oxide (ITO) anode to a hole-transporting layer (HTL). Significantly improved hole injection was achieved by introducing an ultrathin layer of between ITO and HTL, leading to a lower operational voltage and relatively less power consumption. The results can be attributed to the reduced hole-injection energy barrier from ITO to HTL, as shown by x-ray photoelectron spectroscopy measurements, due to the surface dipole that is formed by the . The thickness dependence of was also examined.

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Scitation: Enhanced performance of organic light-emitting diodes with an air-stable n-type hole-injection layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/23/10.1063/1.2942386
10.1063/1.2942386
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