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Experimental arrangement. Inset: typical signal from a GaAs epilayer vertical device using a laser intensity of at .
(a) signals measured using the and laser excitations (upper and lower lines, respectively). The insets show dependence of the normalized peak current on the excitation beam position. (b) Integrated signal intensity vs beam displacement for femtosecond and nanosecond excitation sources. Solid/dashed lines show the calculated position dependence of coherent/incoherent phonon momentum flux.
signal measured in a SL device using the excitation with an intensity of at . The SL curve is shown in the inset.
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