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Semiconductor charge transport driven by a picosecond strain pulse
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10.1063/1.2942389
/content/aip/journal/apl/92/23/10.1063/1.2942389
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/23/10.1063/1.2942389
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Experimental arrangement. Inset: typical signal from a GaAs epilayer vertical device using a laser intensity of at .

Image of FIG. 2.
FIG. 2.

(a) signals measured using the and laser excitations (upper and lower lines, respectively). The insets show dependence of the normalized peak current on the excitation beam position. (b) Integrated signal intensity vs beam displacement for femtosecond and nanosecond excitation sources. Solid/dashed lines show the calculated position dependence of coherent/incoherent phonon momentum flux.

Image of FIG. 3.
FIG. 3.

signal measured in a SL device using the excitation with an intensity of at . The SL curve is shown in the inset.

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/content/aip/journal/apl/92/23/10.1063/1.2942389
2008-06-11
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Semiconductor charge transport driven by a picosecond strain pulse
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/23/10.1063/1.2942389
10.1063/1.2942389
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