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Constraints on micro-Raman strain metrology for highly doped strained Si materials
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10.1063/1.2942392
/content/aip/journal/apl/92/23/10.1063/1.2942392
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/23/10.1063/1.2942392
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Raman redshift relative to unstrained Si for Sb-implanted strained Si samples grown on relaxed buffer layers with 17% or 20% Ge. Samples were measured as implanted and after annealing at 600, 700 or for .

Image of FIG. 2.
FIG. 2.

Peak carrier concentration and absolute Raman redshift as a function of implant dose for (a) Sb-implanted strained Si after RTA at and (b) Sb-implanted bulk Si after RTA at .

Image of FIG. 3.
FIG. 3.

Absolute Raman shifts as a function of peak carrier concentration for Sb-implanted bulk and strained Si after RTA at . We include the theory of Ref. 13 as given by Eq. (1). A linear regression fit of the bulk and strained Si experimental data points yielded an value of 0.89.

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/content/aip/journal/apl/92/23/10.1063/1.2942392
2008-06-12
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Constraints on micro-Raman strain metrology for highly doped strained Si materials
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/23/10.1063/1.2942392
10.1063/1.2942392
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