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Raman redshift relative to unstrained Si for Sb-implanted strained Si samples grown on relaxed buffer layers with 17% or 20% Ge. Samples were measured as implanted and after annealing at 600, 700 or for .
Peak carrier concentration and absolute Raman redshift as a function of implant dose for (a) Sb-implanted strained Si after RTA at and (b) Sb-implanted bulk Si after RTA at .
Absolute Raman shifts as a function of peak carrier concentration for Sb-implanted bulk and strained Si after RTA at . We include the theory of Ref. 13 as given by Eq. (1). A linear regression fit of the bulk and strained Si experimental data points yielded an value of 0.89.
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