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STM image of the surfaces of an BL InN film grown on GaN(0001). The sample bias of the STM was . The image size is .
The measured (a) depth and (b) lateral width of the dark lines for samples of different InN thicknesses. The lines are drawn to guide the eye, and the error bars represent the standand deviation of the mean.
HRTEM micrographs of interfaces viewed along (a) and (b) . The MDs are marked by “⊥” and the Burgers circuits are also drawn.
STM images of an surface obtained at (a) and (b) . Note the contrast reversal of the dislocation lines in the two images (size: ).
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