banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Epitaxial MgO as an alternative gate dielectric for SiC transistor applications
Rent this article for
View: Figures


Image of FIG. 1.
FIG. 1.

Characterization of a MgO film deposited on 6H-SiC (0001) shows smooth, conformal film with only (111) oriented MgO. XRD shows the presence of only (111) and (222) diffraction peaks. AFM indicates a rms roughness of between the step edges. RHEED pattern is characteristic of MgO (111) but shows the presence of some 3D features, as indicated by the Bragg spots. The incident electron beam is parallel to the step edges.

Image of FIG. 2.
FIG. 2.

Capacitance per unit area as a function of gate voltage for a MgO film measured at four different frequencies (, , , and ). The measurement was done with a forward voltage sweep. A reverse sweep shows hysteresis with a uniform width of . The inset shows plots for the same sample measured at on the same scale as the main plot.

Image of FIG. 3.
FIG. 3.

Plot of inverse capacitance per unit area under strong accumulation vs MgO layer thickness. The slope of the linear fit shows an intrinsic MgO dielectric constant of 10 and the intercept shows a series capacitance with an equivalent thickness of .

Image of FIG. 4.
FIG. 4.

Plot of leakage current as a function of electric field for epitaxial MgO on . The measurement was performed on a thick sample with a circular top electrode diameter of . The vertical line corresponds to an electric field of . The inset shows breakdown statistics for 27 devices over a area.


Article metrics loading...


Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Epitaxial MgO as an alternative gate dielectric for SiC transistor applications