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Vertical structure -type permeable metal-base organic transistors based on -diphentyl--bis(1-naphthylphenyl)--biphenyl--diamine
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10.1063/1.2944880
/content/aip/journal/apl/92/23/10.1063/1.2944880
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/23/10.1063/1.2944880
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The schematic diagram of the proposed device structure and the circuits used for transistor characterization in common-base mode (solid line) and common-emitter mode (dash line).

Image of FIG. 2.
FIG. 2.

Common-base characteristics of the device. The inset shows collector current dependence on emitter current at different values of raging from at steps of .

Image of FIG. 3.
FIG. 3.

Common-emitter characteristics of the device. The inset shows the common-emitter current gain of the device.

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/content/aip/journal/apl/92/23/10.1063/1.2944880
2008-06-12
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Vertical structure p-type permeable metal-base organic transistors based on N,N′-diphentyl-N,N′-bis(1-naphthylphenyl)-1,1′-biphenyl-4,4′-diamine
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/23/10.1063/1.2944880
10.1063/1.2944880
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