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Dopant-stress synergy in Si solid-phase epitaxy
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10.1063/1.2945291
/content/aip/journal/apl/92/23/10.1063/1.2945291
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/23/10.1063/1.2945291
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

[(a) and (e)] XTEM images of the as-implanted structure. XTEM images of specimens annealed for with applied stress of (b) , (c) , (d) , (f) 0, (g) , and (h) .

Image of FIG. 2.
FIG. 2.

thickness versus anneal time behavior for different applied stress values as superimposed on the SIMS-determined B concentration profile.

Image of FIG. 3.
FIG. 3.

Effect of B concentration on growth velocity for different applied stress values .

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/content/aip/journal/apl/92/23/10.1063/1.2945291
2008-06-12
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dopant-stress synergy in Si solid-phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/23/10.1063/1.2945291
10.1063/1.2945291
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