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Effect of gate bias sweep rate on the electronic properties of ZnO nanowire field-effect transistors under different environments
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10.1063/1.2945637
/content/aip/journal/apl/92/23/10.1063/1.2945637
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/23/10.1063/1.2945637
/content/aip/journal/apl/92/23/10.1063/1.2945637
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/content/aip/journal/apl/92/23/10.1063/1.2945637
2008-06-13
2014-11-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of gate bias sweep rate on the electronic properties of ZnO nanowire field-effect transistors under different environments
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/23/10.1063/1.2945637
10.1063/1.2945637
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