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Effect of gate bias sweep rate on the electronic properties of ZnO nanowire field-effect transistors under different environments
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10.1063/1.2945637
/content/aip/journal/apl/92/23/10.1063/1.2945637
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/23/10.1063/1.2945637
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Figures

Image of FIG. 1.
FIG. 1.

(a) FESEM image of grown ZnO nanowires. (b) Schematic of a ZnO nanowire FET. (c) FESEM image of a ZnO nanowire across metal electrodes. (d) Typical curves for different gate biases from with step. The inset is curve measured at .

Image of FIG. 2.
FIG. 2.

Series of curves for a ZnO nanowire FET as a function of gate bias sweep rate (2500, 250, 130, 100, 12, 6, 1.2, 0.3, 0.2, and ) measured at (a) under ambient air, (b) -filled glovebox, and (c) ambient air after PMMA passivation. The semilogarithmic plots of curves are shown in the insets. (d) Field-effect mobility, (e) threshold voltage, and (f) carrier density as a function of gate bias sweep rate for the three different environmental conditions.

Image of FIG. 3.
FIG. 3.

Schematics illustrating the effect of gate bias sweep rate. A larger depletion region is formed with slower gate bias sweep rates (a) than the case for faster gate bias sweep rate (b).

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/content/aip/journal/apl/92/23/10.1063/1.2945637
2008-06-13
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of gate bias sweep rate on the electronic properties of ZnO nanowire field-effect transistors under different environments
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/23/10.1063/1.2945637
10.1063/1.2945637
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