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Electrostatic modification of infrared response in gated structures based on
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10.1063/1.2939434
/content/aip/journal/apl/92/24/10.1063/1.2939434
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/24/10.1063/1.2939434
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Transmission of a -based device at . The cross section of the device is shown in the inset. The thicknesses of the various layers in the device are as follows: substrate , , thermally evaporated Ag contacts , parylene , and ITO . The separation between the two Ag contacts is about .

Image of FIG. 2.
FIG. 2.

The absorption as a function frequency at with increasing gate voltage up to and then for decreasing down to 0 V. Inset: The absorption of is plotted as a function of frequency at . The spectrum at , was obtained after a delay of five minutes after the spectrum , to show the stability of the spectrum at a fixed temperature.

Image of FIG. 3.
FIG. 3.

(a) Integrated absorption of and ITO (squares) at is plotted as a function of for hole accumulation (negative axis) and electron accumulation (positive axis) in . The calculated integrated absorption for ITO alone (diamonds) is plotted as a function of .(b) of and ITO is plotted for various temperatures for (hole accumulation in ).

Image of FIG. 4.
FIG. 4.

The resistance of the film is plotted with increasing temperature. Also shown are maps of near-field scattering amplitude of a film for three temperatures (from left to right): insulating regime, phase coexistence, and rutile metal. The scanned area is . The near-field scattering amplitude is higher [light blue and white (light gray)] for the metallic regions compared to the insulating phase [dark blue (dark gray)].

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/content/aip/journal/apl/92/24/10.1063/1.2939434
2008-06-17
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrostatic modification of infrared response in gated structures based on VO2
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/24/10.1063/1.2939434
10.1063/1.2939434
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