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Semiconductor-enriched single wall carbon nanotube networks applied to field effect transistors
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10.1063/1.2939560
/content/aip/journal/apl/92/24/10.1063/1.2939560
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/24/10.1063/1.2939560
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) shows the optical absorption spectra and (b) the Raman spectra at of L, M, and S samples. The centrifugation conditions are improved in the following sequence: L, M, and S. (c) displays vs for of FET devices made from samples M and S.

Image of FIG. 2.
FIG. 2.

(a) and (b) display the transfer characteristic of an FET device made by spin coating. (c) presents the histogram, (○, red) and transconductance (△, blue) vs for samples S (ten devices) and M (three devices). Lines represent linear fit.

Image of FIG. 3.
FIG. 3.

(a) and (b) show the transfer characteristic of an FET device made by dielectrophoresis. (c) displays the atomic force microscopy image of a SWNTs network. (d) shows (○, red) and transconductance (△, blue) vs .

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/content/aip/journal/apl/92/24/10.1063/1.2939560
2008-06-18
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Semiconductor-enriched single wall carbon nanotube networks applied to field effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/24/10.1063/1.2939560
10.1063/1.2939560
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