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Transparent organic field-effect transistors with polymeric source and drain electrodes fabricated by inkjet printing
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/content/aip/journal/apl/92/24/10.1063/1.2940232
2008-06-19
2014-12-27

Abstract

Transparent organic field-effect transistors based on pentacene were fabricated on indium tin oxide (ITO)-coated glass using ITO as the gate electrode, grown by atomic layer deposition as the gate insulator, and an inkjet-printed conducting polymer poly(3,4-ethylenedioxythiophene):poly(4-styrenesulphonate) as the source and drain electrodes. The transistors combine an overall high transmittance (84% in the channel and 78% through source/drain electrodes) in the visible region, a field-effect mobility value of , a threshold voltage of , a subthreshold slope of /decade, and an on/off current ratio of .

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Scitation: Transparent organic field-effect transistors with polymeric source and drain electrodes fabricated by inkjet printing
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/24/10.1063/1.2940232
10.1063/1.2940232
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