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The fabricated CdSe NC-SWCNT-FET: (a) a schematic of substrate and Au electrode combined with gate-bias modulation, (b) the low magnification FE-SEM image indicating the center with ten arrays of electrodes on substrate [inset: optical image of array], (c) High magnification FE-SEM image of the individual NCs-SWCNT electrode corresponding to the white circle in (b) while a low magnification image is shown in the inset, which will be used for photocurrent measurement, and (d) those corresponding to the black circle in (b).
characteristics of the SWCNT-FET device: (a) vs characteristics and (b) vs characteristics ( range: , step: ).
(a) Photoluminescence of the CdSe NC-SWCNT-FET (inset: confocal microscope image of the channel region, the white arrow: NCs on an individual SWCNT, the white dotted arrow: silicon oxide substrate). (b) Absorption spectra of CdSe NCs in toluene and in buffer solvent of pH 9 (inset: transmission electron microscope image of NCs with a typical size of ).
(a) Photocurrent of CdSe NCs/SWCNT and pure SWCNT without NCs as a function of wavelength of the incident light in the SWCNT-FET device. The photocurrent was normalized by the spectral response of the light source. (b) The on/off photoresponse response as a function of time for an incident light at a given laser energy of .
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