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Photocurrent of CdSe nanocrystals on single-walled carbon nanotube-field effect transistor
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10.1063/1.2944813
/content/aip/journal/apl/92/24/10.1063/1.2944813
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/24/10.1063/1.2944813
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Figures

Image of FIG. 1.
FIG. 1.

The fabricated CdSe NC-SWCNT-FET: (a) a schematic of substrate and Au electrode combined with gate-bias modulation, (b) the low magnification FE-SEM image indicating the center with ten arrays of electrodes on substrate [inset: optical image of array], (c) High magnification FE-SEM image of the individual NCs-SWCNT electrode corresponding to the white circle in (b) while a low magnification image is shown in the inset, which will be used for photocurrent measurement, and (d) those corresponding to the black circle in (b).

Image of FIG. 2.
FIG. 2.

characteristics of the SWCNT-FET device: (a) vs characteristics and (b) vs characteristics ( range: , step: ).

Image of FIG. 3.
FIG. 3.

(a) Photoluminescence of the CdSe NC-SWCNT-FET (inset: confocal microscope image of the channel region, the white arrow: NCs on an individual SWCNT, the white dotted arrow: silicon oxide substrate). (b) Absorption spectra of CdSe NCs in toluene and in buffer solvent of pH 9 (inset: transmission electron microscope image of NCs with a typical size of ).

Image of FIG. 4.
FIG. 4.

(a) Photocurrent of CdSe NCs/SWCNT and pure SWCNT without NCs as a function of wavelength of the incident light in the SWCNT-FET device. The photocurrent was normalized by the spectral response of the light source. (b) The on/off photoresponse response as a function of time for an incident light at a given laser energy of .

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/content/aip/journal/apl/92/24/10.1063/1.2944813
2008-06-16
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photocurrent of CdSe nanocrystals on single-walled carbon nanotube-field effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/24/10.1063/1.2944813
10.1063/1.2944813
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