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[(a)–(d)] Cross-sectional schematic of the fabrication process flow for the MSM structures with CNT film electrodes along the dashed line shown in part (f): (a) thick isolation layer is thermally grown on the Si substrate. (b) Active area windows are opened in by photolithography and wet etching using HF. (c) thick CNT film is deposited on the substrate and patterned by photolithography and ICP etching. (d) metal contacts are patterned on the nanotube film contact pads using photolithography, e-beam evaporation, and lift-off. (e) AFM image showing the texture of a thick as-prepared CNT film. (f) Top view optical microscope image of a CNT film-Si MSM structure, showing the definition of various device dimensions. (g) AFM image showing the area between two CNT film electrode fingers of the MSM structure.
(a) Current-voltage and (b) capacitance-voltage characteristics measured at room temperature for a CNT film -type Si MSM structure with and .
(a) Log current vs applied voltage measured at nine different temperatures between 150 and for a CNT film--type Si MSM device with , , and . (b) The Richardson plot of vs at bias in the temperature range of for four CNT film-Si MSM devices of identical active area and finger width , but different finger spacing and different Si doping types, as labeled in the figure. The dashed lines are linear best fits to the experimental data, from the slope of which Schottky barrier heights of and are extracted for and -type Si devices, and and are extracted for and -type Si devices, respectively. The inset shows log current vs for the -type and -type Si MSM structures with in a wider temperature window (from ) at bias.
Measured room-temperature dark and photocurrent (log scale) vs applied voltage for MSM devices with CNT film and metal electrodes, as labeled in the figure. For both devices, , , and and Si is -type.
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