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On the effect of the electrical contact resistance in nanodevices
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10.1063/1.2946663
/content/aip/journal/apl/92/24/10.1063/1.2946663
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/24/10.1063/1.2946663
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The schematics of the electric circuit (right) and the scanning electron microscope pictures (left) depict a type A Pt NW (a) and a type B Pt NW (b), respectively.

Image of FIG. 2.
FIG. 2.

Dependence of the electrical resistance on the ambient temperature of type A Pt NWs (full symbols) and type B Pt NWs (cross and “x” symbols) all measured in the two-point configuration. The dashed lines represent the linear fittings. The sample marked as “x” exhibits the lowest TCR of , the sample marked as “+” exhibits the highest TCR of .

Image of FIG. 3.
FIG. 3.

Type B Pt NWs measured in four-point configuration (separate samples marked as “x” and “+,” respectively). The dashed lines represent the linear fittings.

Image of FIG. 4.
FIG. 4.

Electric contact resistance of the measured Pt NWs over the ambient temperature (separate samples marked as “x” and “+,” respectively). The dashed lines represent the linear fittings.

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/content/aip/journal/apl/92/24/10.1063/1.2946663
2008-06-17
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On the effect of the electrical contact resistance in nanodevices
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/24/10.1063/1.2946663
10.1063/1.2946663
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