Full text loading...
Schematic device layout of the pin detector device with -multilayer and MgO-tunneling contacts (a). The measurement setup is depicted in (b). The diode current is measured as a function of the input polarization at room temperature.
(a) Photocurrent as a function of the applied magnetic field for a left circular (, open triangles), right circular (99.1%, filled triangles), and nearly linear polarized (13.3%, open circles) optical excitation at . (b) Photocurrent vs the circular excitation polarization in the fixed negative remanent magnetization state. All measurements were done at room temperature.
Photocurrent as a function of the optical excitation intensity in the positive remanent magnetization state for left (open triangles) and right (filled triangles) circular polarized excitations (left axis) at . The filled circles display the difference between both signals (right axis).
Simultaneous measurements of the photocurrent (filled squares, left axis) and the photoluminescence intensity (open squares, right axis) for left circular optical excitation at (Ref. 18) versus the applied magnetic field. As the latter does not depend on the field strength within error bars, major magneto-optical artifacts can be ruled out.
Article metrics loading...