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Evidence of electron-phonon interaction on transport in - and -type silicon nanowires
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10.1063/1.2949072
/content/aip/journal/apl/92/24/10.1063/1.2949072
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/24/10.1063/1.2949072
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Typical layout for the NWs with their contacts. (b) three-dimensional tapping-mode AFM image of a NW with a length of and a width of . scale ranges from .

Image of FIG. 2.
FIG. 2.

Variation of the resistance of NWs vs the temperature: (a) typical variation for a width, -type NW, from , (b) -type NWs with widths ranging from , and (c) -type NWs with widths ranging from .

Image of FIG. 3.
FIG. 3.

Variation of the coefficient vs for - and -type NWs.

Image of FIG. 4.
FIG. 4.

Variation of the NW resistances vs the inverse of the width for (a) -type and (b) -type NWs. For the correction, we take into account the depletion width to get the effective width .

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/content/aip/journal/apl/92/24/10.1063/1.2949072
2008-06-19
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evidence of electron-phonon interaction on transport in n- and p-type silicon nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/24/10.1063/1.2949072
10.1063/1.2949072
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