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Device characteristics of carbon nanotube transistor fabricated by direct growth method
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10.1063/1.2949075
/content/aip/journal/apl/92/24/10.1063/1.2949075
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/24/10.1063/1.2949075
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Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic fabrication sequence of thin films which act as catalyst and electrodes. (b) AFM image of a CNT-FET: the size of this image is . Scales of horizontal direction in (a) and (b) roughly correspond to each other.

Image of FIG. 2.
FIG. 2.

(a) Output characteristics for -channel operation at for (◻), (○), (◼), (▲), (▼), (◆), and (●). (b) Transfer characteristics at for (○) and at for (◼), (▲), (▼), (◆), (●).

Image of FIG. 3.
FIG. 3.

(a) Arrhenius plots of at for various in steps. (b) vs plots for the electron injection barriers (circle) and hole injection barriers (square). Closed and open marks show data for carrier injection from the left and right electrodes, respectively, of the device in Fig 1. Dotted lines are fitting results.

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/content/aip/journal/apl/92/24/10.1063/1.2949075
2008-06-18
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Device characteristics of carbon nanotube transistor fabricated by direct growth method
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/24/10.1063/1.2949075
10.1063/1.2949075
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