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Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited gate dielectric
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10.1063/1.2949079
/content/aip/journal/apl/92/24/10.1063/1.2949079
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/24/10.1063/1.2949079
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

characteristics of for (a) as-deposited and (b) with PDA at . Inset shows hysteresis curve at . The capacitor gate area is .

Image of FIG. 2.
FIG. 2.

XPS As and Ga spectra of for (a) as-deposited , (b) after PDA at , and (c) as-deposited with GaAs preanneal at .

Image of FIG. 3.
FIG. 3.

characteristics of MOS capacitors on GaAs for (i) as-deposited , (ii) with PDA at , and (iii) as-deposited with preanneal at . The capacitor gate area is .

Image of FIG. 4.
FIG. 4.

characteristics of as-deposited with GaAs preanneal after treatment. The capacitor gate area is .

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/content/aip/journal/apl/92/24/10.1063/1.2949079
2008-06-19
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/24/10.1063/1.2949079
10.1063/1.2949079
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