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Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited gate dielectric
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10.1063/1.2949079
/content/aip/journal/apl/92/24/10.1063/1.2949079
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/24/10.1063/1.2949079
/content/aip/journal/apl/92/24/10.1063/1.2949079
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/content/aip/journal/apl/92/24/10.1063/1.2949079
2008-06-19
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of elemental arsenic on electrical characteristics of metal-oxide-semiconductor capacitors on GaAs using atomic-layer deposited HfO2 gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/24/10.1063/1.2949079
10.1063/1.2949079
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