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Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of using stacked gate dielectric
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10.1063/1.2943186
/content/aip/journal/apl/92/25/10.1063/1.2943186
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2943186
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical characteristics from for InP MOSCAPs with different gate dielectrics: (a) [sample (a)], (b) [sample (b)], (c) stacked [sample (c)], (d) Stacked [sample (d)]. Frequency dispersion was calculated between and at a gate voltage of .

Image of FIG. 2.
FIG. 2.

Gate leakage current density versus gate voltage of InP MOSCAPs with different gate dielectrics for sample (a) to sample (d).

Image of FIG. 3.
FIG. 3.

Log-scale drive current and gate leakage current versus gate voltage at for InP MOSFETs with (a), or (c), or (d) as gate dielectric .

Image of FIG. 4.
FIG. 4.

Extrinsic transconductance versuss at for InP MOSFETs with (a), or (c), or (d) as gate dielectric. (b) and for InP MOSFETs with (d) as gate dielectric at .

Image of FIG. 5.
FIG. 5.

as a function of at , 0.5 V, 1 V, for InP MOSFETs with (a), or (c), or (d) as gate dielectric .

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/content/aip/journal/apl/92/25/10.1063/1.2943186
2008-06-25
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx∕HfO2 gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2943186
10.1063/1.2943186
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