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Activation and carrier mobility in high fluence B implanted germanium
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10.1063/1.2949088
/content/aip/journal/apl/92/25/10.1063/1.2949088
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2949088
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Sheet resistance of B implanted in preamorphized Ge (circles) and Si (triangles) after SPE process, vs implant B fluence (note the break in vertical axis). (b) Hall dose trend vs implant B fluence for the same samples; linear fit (thick line) for Si and Ge samples to extract the factor in the linear regime of the trends; simulations of trend for some fixed maximum active B levels for Si and Ge (dashed and dotted lines, respectively).

Image of FIG. 2.
FIG. 2.

Drift mobility vs dopant concentration for B doped Ge (circles, this work) and for -type Ge as reported in Ref. 6 (diamond, as extracted from the paper). The indicated empirical law (continuous line) fits the trend obtained in this work.

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/content/aip/journal/apl/92/25/10.1063/1.2949088
2008-06-24
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Activation and carrier mobility in high fluence B implanted germanium
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2949088
10.1063/1.2949088
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