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High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with films
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10.1063/1.2949318
/content/aip/journal/apl/92/25/10.1063/1.2949318
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2949318
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Figures

Image of FIG. 1.
FIG. 1.

characteristics of A/S/4H-SiC and S/4H-SiC MSM photodetectors: (a) photocurrent at the wavelength of from and (b) dark current from . The inset shows the schematic structure of the A/S/4H-SiC MSM photodetectors.

Image of FIG. 2.
FIG. 2.

(a) Spectral response and external QE of A/S/4H-SiC and S/4H-SiC MSM photodetectors from with spectral resolution of under bias voltages from . (b) Reflection spectra of the evaporated A/S films and thermally grown layer on 4H-SiC substrates in the spectral range of with spectral resolution of .

Image of FIG. 3.
FIG. 3.

Comparison of response and reflection spectra for A/S/4H-SiC MSM photodetectors from at electrical bias.

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/content/aip/journal/apl/92/25/10.1063/1.2949318
2008-06-23
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-performance 4H-SiC based metal-semiconductor-metal ultraviolet photodetectors with Al2O3∕SiO2 films
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2949318
10.1063/1.2949318
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