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Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer
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10.1063/1.2949741
/content/aip/journal/apl/92/25/10.1063/1.2949741
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2949741
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Carrier decay transients measured with a streak camera at the maxima of the PL emission and for a temperature of . (Inset) Normalized PL spectra for low-excitation power.

Image of FIG. 2.
FIG. 2.

Carrier decay transients measured at different wavelengths across the ground-state emission for (a) QDSb14 (streak camera data) and (b) QDSb22 (TCSPC data). The labels give the detection wavelengths.

Image of FIG. 3.
FIG. 3.

Carrier decay times for different detection wavelengths across the ground-state emission band and PL spectra at different excitation densities for QDSb22.

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/content/aip/journal/apl/92/25/10.1063/1.2949741
2008-06-23
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier lifetimes in type-II InAs quantum dots capped with a GaAsSb strain reducing layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2949741
10.1063/1.2949741
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