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Effect of InGaN quantum dot size on the recombination process in light-emitting diodes
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10.1063/1.2951607
/content/aip/journal/apl/92/25/10.1063/1.2951607
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2951607
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The size of QDs as a function of growth time. The solid lines serve as a reference guide.

Image of FIG. 2.
FIG. 2.

Room temperature PL spectra of InGaN QDs with sizes of 1.32, 2.40, and .

Image of FIG. 3.
FIG. 3.

PL spectra excited by laser power of 1 and measured at for (a) small size QDs and (b) large size QDs . The insets depict the schematic energy band diagrams of the small and large size QDs with built-in piezoelectric fields.

Image of FIG. 4.
FIG. 4.

Normalized EL spectra of InGaN QD LEDs of different sizes at an input current of .

Image of FIG. 5.
FIG. 5.

Peak position and the FWHM of EL peak with increasing input current for InGaN QDs with a size of 1.32 and . The solid lines serve as a reference guide.

Image of FIG. 6.
FIG. 6.

Optical output power of LEDs fabricated using small and large size InGaN QDs.

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/content/aip/journal/apl/92/25/10.1063/1.2951607
2008-06-25
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of InGaN quantum dot size on the recombination process in light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2951607
10.1063/1.2951607
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