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Silicon resonant cavity enhanced photodetector based on the internal photoemission effect at : Fabrication and characterization
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10.1063/1.2952193
/content/aip/journal/apl/92/25/10.1063/1.2952193
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2952193
/content/aip/journal/apl/92/25/10.1063/1.2952193
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/content/aip/journal/apl/92/25/10.1063/1.2952193
2008-06-24
2014-09-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Silicon resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55μm: Fabrication and characterization
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2952193
10.1063/1.2952193
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