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Silicon resonant cavity enhanced photodetector based on the internal photoemission effect at : Fabrication and characterization
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10.1063/1.2952193
/content/aip/journal/apl/92/25/10.1063/1.2952193
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2952193

Figures

Image of FIG. 1.
FIG. 1.

Cross section of the proposed and fabricated RCE photodiode.

Image of FIG. 2.
FIG. 2.

characteristic of the realized diode.

Image of FIG. 3.
FIG. 3.

Measured responsivity vs wavelength for the fabricated device without a Bragg reflector: with of reverse bias applied (dashed) and without bias applied (solid).

Image of FIG. 4.
FIG. 4.

Responsivity vs wavelength for the fabricated device fed of Bragg reflector: experimental at of reverse bias applied (dashed) and its curve fitting by Eq. (1) (dash dot); experimental without bias applied (solid).

Tables

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Table I.

Responsivity measurements.

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/content/aip/journal/apl/92/25/10.1063/1.2952193
2008-06-24
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Silicon resonant cavity enhanced photodetector based on the internal photoemission effect at 1.55μm: Fabrication and characterization
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2952193
10.1063/1.2952193
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