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Cross-sectional TEM images of (a) sample prepared by depositing a Ni layer between layers of composition, , 1.33, and 1.77. (b) Sample prepared by depositing different Ni thicknesses between layers with .
(a) High-resolution cross-sectional TEM images of a sample prepared using a structure with a Ni film of thickness. (b) Plane-view TEM image of the sample. The left- and right-side insets represent the high-magnification TEM and EDS spectrum of the nanocrystal marked with a white arrow, respectively.
characteristics of MOS structures provided with the sample shown in Fig. 2: (a) with Ni-based nanocrystals and (b) without Ni-based nanocrystals.
Average size, standard deviation, and areal density of Ni-based nanocrystals prepared with different Si concentration and Ni thickness.
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