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Pockel’s effect and optical rectification in (111)-cut near-intrinsic silicon crystals
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10.1063/1.2952462
/content/aip/journal/apl/92/25/10.1063/1.2952462
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2952462
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Configuration of silicon sample and the measuring system for PE. (a) MIS configuration of silicon sample, whose size and orientation are denoted. (b) Experimental setup for PE measurements.

Image of FIG. 2.
FIG. 2.

Dependence of electro-optic signals on the applied voltage. The electro-optic response is linear for the applied voltage changed from 10 up to .

Image of FIG. 3.
FIG. 3.

Experimental setup for OR measurements. A half-wave plate is used for changing the azimuth of the linear polarization light.

Image of FIG. 4.
FIG. 4.

The measured anisotropy of OR at the (111) surface of silicon crystal. The solid line is the fitting curve according to a cosine function with a period pi, which is in good accordance with the experimental data and the theory.

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/content/aip/journal/apl/92/25/10.1063/1.2952462
2008-06-26
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Pockel’s effect and optical rectification in (111)-cut near-intrinsic silicon crystals
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2952462
10.1063/1.2952462
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