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Tunneling-injection of electrons and holes into quantum dots: A tool for high-power lasing
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10.1063/1.2952488
/content/aip/journal/apl/92/25/10.1063/1.2952488
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2952488
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Energy band diagram of a tunneling-injection QD laser and the main processes: ① carrier injection from the cladding layers to the OCL, ② majority carrier capture from the OCL into the QW and thermal escape from the QW to the OCL, ③ carrier tunneling from the QW into a QD, ④ spontaneous and stimulated recombination in a QD, ⑤ carrier out-tunneling from a QD into the foreign QW, ⑥ spontaneous recombination in the QWs, ⑦ minority carrier thermal escape from the QW to the OCL and capture from the OCL into the QW, and ⑧ spontaneous recombination in the OCL.

Image of FIG. 2.
FIG. 2.

LCC of a tunneling-injection QD laser (solid curve). The dashed line is the LCC of an ideal structure given by Eq. (8). The dash-dotted line is the asymptote given by Eq. (11). The inset shows the parasitic recombination current density (solid curve) and out-tunneling current density (horizontal dashed line) against excess injection current density. GaInAsP heterostructure lasing near is considered here. The tunneling coefficients are as follows: , , , and .

Image of FIG. 3.
FIG. 3.

Internal quantum efficiency (dashed curve) and slope efficiency (solid curve) against excess injection current density.

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/content/aip/journal/apl/92/25/10.1063/1.2952488
2008-06-26
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tunneling-injection of electrons and holes into quantum dots: A tool for high-power lasing
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2952488
10.1063/1.2952488
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