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Effects of gate dielectrics and metal electrodes on air-stable -channel perylene tetracarboxylic dianhydride single-crystal field-effect transistors
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/content/aip/journal/apl/92/25/10.1063/1.2953079
2008-06-27
2014-11-23

Abstract

The effects of gate dielectric materials and metal electrodes are studied systematically for air-stable -type single-crystalfield-effect transistors based on perylene tetracarboxylic dianhydride. It is demonstrated that neither the use of high-work-function electrodes nor exposure to air is fatal to the -type operations for the single crystals with sufficiently large electron affinity. Mobility values are , which is one order of magnitude higher than those reported for thin-film transistors in vacuum. The most crucial among the common suspects for the generally poorer performance of -type organic transistors was the effect of acidic hydroxyl groups in gate dielectrics.

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Scitation: Effects of gate dielectrics and metal electrodes on air-stable n-channel perylene tetracarboxylic dianhydride single-crystal field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2953079
10.1063/1.2953079
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