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Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate
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10.1063/1.2953080
/content/aip/journal/apl/92/25/10.1063/1.2953080
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2953080
/content/aip/journal/apl/92/25/10.1063/1.2953080
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/content/aip/journal/apl/92/25/10.1063/1.2953080
2008-06-27
2014-12-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2953080
10.1063/1.2953080
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