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Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate
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10.1063/1.2953080
/content/aip/journal/apl/92/25/10.1063/1.2953080
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2953080
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Figures

Image of FIG. 1.
FIG. 1.

loops on -type GaAs MOS with ITO gate as gradually increasing light illumination measured at . The thickness of oxide is . The data are normalized by calculated of using capacitance area of and dielectric constant of 8.0. The typical carrier concentration of ITO films is in this work (Ref. 22), which is about three orders of magnitude larger than the doping concentration of GaAs. The effect of ITO depletion is not considered on the data analysis.

Image of FIG. 2.
FIG. 2.

[(a) and (b)] QS characteristics on - and -type GaAs substrates. The thickness of oxide is . All measurements are performed in dark with the delay time of and sweeping rate of . The accumulation capacitance value in -type GaAs is expected to be little larger than that in -type GaAs (Ref. 20). [(c) and (d)] Effective mass simulation on - and -type GaAs substrates with different doping concentrations, ITO work function of , and zero interface trap density.

Image of FIG. 3.
FIG. 3.

Measured QS capacitance at accumulation and inversion bias regions as different dielectric thickness on -type GaAs substrate. The error bars are introduced due to the nonasymptotic values in the inversion and accumulation capacitances.

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/content/aip/journal/apl/92/25/10.1063/1.2953080
2008-06-27
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Inversion capacitance-voltage studies on GaAs metal-oxide-semiconductor structure using transparent conducting oxide as metal gate
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/25/10.1063/1.2953080
10.1063/1.2953080
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