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Axially graded heteroepitaxy and Raman spectroscopic characterizations of nanowires
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) The schematics of our combinatorial syntheses; the flow rates of and were systematically modulated for the total growth of . (b) A representative TEM image of an individual nanowire. Inset shows the intensity of radiations in energy-dispersive ray EDX spectra collected from six different positions (1–6) marked in (b). The intensity of all spectra was normalized respect to radiation for comparison. (c)–(d) High resolution TEM images of the nanowire at different positions marked in (b). Insets are electron diffraction patterns indicating that the crystal orientation along the length is [211].

Image of FIG. 2.
FIG. 2.

The Ge contents and {022} interplanar distances at six different positions of an individual nanowire, marked in Fig. 1(b). Open circles are {022} interplanar distances in the bulk limit, extracted from the measured compositions. The inset schematically indicates that some degree of strain, associated with the graded axial heteroepitaxy of Si on Ge, is built up within the individual nanowire due to the lattice mismatch.

Image of FIG. 3.
FIG. 3.

(a) Optical micrograph of a nanowire under Raman characterizations. Confocal Raman images of nanowire obtained by integrating (b), (c), and (d) Raman transitions. Typical Raman spectra obtained at the point A (e) and B (f) of the nanowire, and bulk Si (g), along with the band assignment. The color scale on the Raman images is normalized in order to show the detailed intensity variations. (h) Raman band intensities plotted as a function of detection polarization for parallel and perpendicular polarization excitations. The squares, triangles, and circles represent the , , and bands respectively. The solid line corresponds to the fit. The signal for perpendicularly polarized excitation is not included because of poor signal/noise ratio. The error bars represent the instrumental noise within spectral integration.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Axially graded heteroepitaxy and Raman spectroscopic characterizations of Si1−xGex nanowires