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Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
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10.1063/1.2949087
/content/aip/journal/apl/92/26/10.1063/1.2949087
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2949087
/content/aip/journal/apl/92/26/10.1063/1.2949087
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/content/aip/journal/apl/92/26/10.1063/1.2949087
2008-06-30
2014-07-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2949087
10.1063/1.2949087
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