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Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
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10.1063/1.2949087
/content/aip/journal/apl/92/26/10.1063/1.2949087
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2949087
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross-sectional structure of HEMT with an AlGaN channel layer.

Image of FIG. 2.
FIG. 2.

curves in the channel HEMT.

Image of FIG. 3.
FIG. 3.

Off-state curves in the three kinds of HEMTs with the of (a) 3 and (b) .

Image of FIG. 4.
FIG. 4.

dependence of (a) the breakdown voltage and (b) the maximum drain current density in the HEMTs with three kinds of heterostructure.

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/content/aip/journal/apl/92/26/10.1063/1.2949087
2008-06-30
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2949087
10.1063/1.2949087
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