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Capacitance transient and current-/capacitance-voltage study of direct silicon bonded interface
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10.1063/1.2952513
/content/aip/journal/apl/92/26/10.1063/1.2952513
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2952513
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic energy band diagram at a shallow GB before and after applying a positive pulse voltage on the Au contact and (b) the GB charge density obtained by curves as a function of quasi-Fermi level energy position defined by measurement.

Image of FIG. 2.
FIG. 2.

The capacitance transient and corresponding charge transient at the GB after applying a pulse voltage on the Au contact. The inset is the calculated energy band diagrams at different times during charge transient.

Image of FIG. 3.
FIG. 3.

Charge decay rate at the GB as a function of total charge density at different temperatures after filling GB states with a pulse voltage of .

Image of FIG. 4.
FIG. 4.

The Arrhenius plots at different GB charge densities. The inset is the charge density of GB states and their capture cross sections as a function of energy level.

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/content/aip/journal/apl/92/26/10.1063/1.2952513
2008-06-30
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Capacitance transient and current-/capacitance-voltage study of direct silicon bonded (110)∕(100) interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2952513
10.1063/1.2952513
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