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and (inset) AFM images of GaAs grown on (a) exact Si and (b) Si with 6° misorientation towards . The AFM images are shown in voltage scale.
AFM images of QDs grown on misoriented silicon at (a) and (b) , and on GaAs substrate at (c). The AFM images are shown in voltage scale. (d) HRSEM image of the sample shown in (b).
(a) PL spectra at , , and RT, and (b) temperature dependence of the integrated PL intensity of the capped QD sample grown at .
Temperature dependence of the (a) GS peak linewidth and (b) GS energy of the capped QD sample grown at . The solid line in (b) shows the temperature dependence of the bulk InAs band gap.
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