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Growth of quantum dots on silicon substrate with high density and efficient light emission in the band
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10.1063/1.2952594
/content/aip/journal/apl/92/26/10.1063/1.2952594
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2952594
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Figures

Image of FIG. 1.
FIG. 1.

and (inset) AFM images of GaAs grown on (a) exact Si and (b) Si with 6° misorientation towards [011]. The AFM images are shown in voltage scale.

Image of FIG. 2.
FIG. 2.

AFM images of QDs grown on misoriented silicon at (a) and (b) , and on GaAs substrate at (c). The AFM images are shown in voltage scale. (d) HRSEM image of the sample shown in (b).

Image of FIG. 3.
FIG. 3.

(a) PL spectra at , , and RT, and (b) temperature dependence of the integrated PL intensity of the capped QD sample grown at .

Image of FIG. 4.
FIG. 4.

Temperature dependence of the (a) GS peak linewidth and (b) GS energy of the capped QD sample grown at . The solid line in (b) shows the temperature dependence of the bulk InAs band gap.

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/content/aip/journal/apl/92/26/10.1063/1.2952594
2008-07-01
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Growth of InAs∕Sb:GaAs quantum dots on silicon substrate with high density and efficient light emission in the 1.3μm band
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2952594
10.1063/1.2952594
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