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Comparison of leakage behaviors in - and -type metal-oxide-semiconductor capacitors with hafnium silicon oxynitride gate dielectric by electron-beam-induced current
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10.1063/1.2952829
/content/aip/journal/apl/92/26/10.1063/1.2952829
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2952829
/content/aip/journal/apl/92/26/10.1063/1.2952829
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/content/aip/journal/apl/92/26/10.1063/1.2952829
2008-06-30
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison of leakage behaviors in p- and n-type metal-oxide-semiconductor capacitors with hafnium silicon oxynitride gate dielectric by electron-beam-induced current
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2952829
10.1063/1.2952829
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