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Cross-sectional structure of nMOS and EBIC arrangement. SE and EBIC images of nMOS.
EBIC images of pMOS and nMOS at zero bias.
Band diagrams of pMOS and nMOS at zero bias. In pMOS, hole conduction is significantly enhanced by trap-assisted tunneling.
EBIC images of an nMOS before and after constant voltage stressing (CVS) at for 500 and .
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