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Comparison of leakage behaviors in - and -type metal-oxide-semiconductor capacitors with hafnium silicon oxynitride gate dielectric by electron-beam-induced current
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10.1063/1.2952829
/content/aip/journal/apl/92/26/10.1063/1.2952829
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2952829
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional structure of nMOS and EBIC arrangement. SE and EBIC images of nMOS.

Image of FIG. 2.
FIG. 2.

EBIC images of pMOS and nMOS at zero bias.

Image of FIG. 3.
FIG. 3.

Band diagrams of pMOS and nMOS at zero bias. In pMOS, hole conduction is significantly enhanced by trap-assisted tunneling.

Image of FIG. 4.
FIG. 4.

EBIC images of an nMOS before and after constant voltage stressing (CVS) at for 500 and .

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/content/aip/journal/apl/92/26/10.1063/1.2952829
2008-06-30
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Comparison of leakage behaviors in p- and n-type metal-oxide-semiconductor capacitors with hafnium silicon oxynitride gate dielectric by electron-beam-induced current
http://aip.metastore.ingenta.com/content/aip/journal/apl/92/26/10.1063/1.2952829
10.1063/1.2952829
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