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Influence of bismuth incorporation on the valence and conduction band edges of
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Peak-normalized PL spectra of for different temperatures. Laser power density . (b) PL spectra at for different laser power densities. LE and FE indicate localized carrier and free-exciton recombination, respectively. (c) Same as (b) for . Notice the negligible contribution of LE to the PL spectra.(d) Temperature dependence of the shift of PL peak energy for (full diamonds) and GaAs (open squares) measured with respect to . Lines are a guide to the eye.

Image of FIG. 2.
FIG. 2.

(a) Peak-normalized PL spectra of in the free-exciton region at for different magnetic field intensities. (b) Same as (a) for the GaAs excitonic recombination in the sample buffer layer.

Image of FIG. 3.
FIG. 3.

Diamagnetic shift as a function of magnetic field for (circles) and GaAs (squares). Gray solid lines are fits to the data by the numerical method reported in Ref. 27. The exciton reduced mass is the only fitting parameter. The dashed line is the diamagnetic shift predicted on the basis of the model of Ref. 27 for , namely, infinite hole mass and unperturbed electron mass. Clearly, such a limit cannot account for the data.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of bismuth incorporation on the valence and conduction band edges of GaAs1−xBix